? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 600 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 600 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c4a i dm t c = 25 ? c, pulse width limited by t jm 8a i a t c = 25 ? c2a e as t c = 25 ? c 200 mj dv/dt i s ?? i dm , v dd ? v dss , t j ? 150 ? c 35 v/ns p d t c = 25 ? c 114 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g ds100427a(11/13) polar3 tm hiperfet tm power mosfets n-channel enhancement mode avalanche rated fast intrinsic rectifier ixfy4n60p3 ixfa4n60p3 IXFP4N60P3 v dss = 600v i d25 = 4a r ds(on) ? ? ? ? ? 2.2 ? ? ? ? ? features ? international standard packages ? fast intrinsic rectifier ? avalanche rated ? low r ds(on) and q g ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 100 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 2.2 ? g = gate d = drain s = source tab = drain g d s to-220 (ixfp) d (tab) to-263 (ixfa) g s d (tab) to-252 (ixfy) g s d (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfy4n60p3 ixfa4n60p3 IXFP4N60P3 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 2.2 3.7 s r gi gate input resistance 6.0 ? c iss 365 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 46 pf c rss 3 pf t d(on) 15 ns t r 24 ns t d(off) 24 ns t f 23 ns q g(on) 6.9 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 1.7 nc q gd 2.8 nc r thjc 1.10 ? c/w r thcs to-220 0.50 ? c/w note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 30 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns q rm 0.35 ????????????? c i rm 2.15 a i f = 4a, -di/dt = 25a/ s v r = 100v pins: 1 - gate 2 - drain 3 - source to-220 outline to-252 outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1. gate 2. drain 3. source 4. drain bottom side prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 outline 1 = gate 2 = drain 3 = source 4 = drain bottom side
? 2013 ixys corporation, all rights reserved ixfy4n60p3 ixfa4n60p3 IXFP4N60P3 fig. 1. output characteristics @ t j = 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 2. extended output characteristics @ t j = 25oc 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ t j = 125oc 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20 22 v ds - volts i d - amperes 4v 6v 5v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 2a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 5. r ds(on) normalized to i d = 2a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 01234567 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfy4n60p3 ixfa4n60p3 IXFP4N60P3 fig. 7. input admittance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 1 2 3 4 5 6 7 00.511.522.533.544.555.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 01234567 q g - nanocoulombs v gs - volts v ds = 300v i d = 2a i g = 10ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2013 ixys corporation, all rights reserved ixfy4n60p3 ixfa4n60p3 IXFP4N60P3 ixys ref: f_4n60p3(k2)12-07-11 fig. 13. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaaa 2
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